|Course Title:||Introduction to Solid State Devices|
Electric and magnetic properties of materials are examined with emphasis on engineering applications. Typical devices which are considered include ohmic and non-ohmic contacts, voltaic cells, PN junction devices, ferroelectric energy converters, ferrite devices and integrated circuits.
Textbook and/or Other Required Material:
Streetman B, and Banerjee S: Solid State Electronic Devices, Prentice Hall, 6th edition, 2005, ISBN: 013149726X
After completing this course the students should be able to:
- Have a comprehensible understanding of semiconductor materials, growth of semiconductor materials, atomic bonding, semiconductor energy band gap engineering, and electrical conduction in solids, energy density states and Fermi-Dirac distribution.
- Have a conceptual understanding of the characteristics of the semiconductor in thermal equilibrium and non-equilibrium conditions.
- Develop knowledge of device physics through the study of the p-n junction device electrical and fabrication parameters, transient effects, small signal modeling, etc.
- Have conceptual understanding of the physics of two and three terminal MOS devices and various electrical parameters, short channel effects, MOS technology.
- Gain knowledge of bipolar device physics, current gain factors versus emitter and base physical parameters, BJT modeling.
- Design semiconductor devices by modeling and fabrication in the microelectronics laboratory.
- Semiconductor Material, Types of Solids, Space Lattice, Atomic Bonding
- Imperfections and Impurities in solids, Growth of semiconductors
- Allowed Forbidden Energy Bands, Electrical Conduction in solids, Energy density States
- Fermi-Dirac Distribution, Charge carriers in semiconductors
- Dopant atoms, Energy Levels and Fermi energy level
- Intrinsic and Extrinsic Semiconductor
- Statistics of Donors and Acceptors, Charge Neutrality
- Carrier Transport Phenomena ( Mobility, Hall effect, drift and diffusion current density)
- Graded impurity distribution
- Built-in potential, electrical field and depletion width of p-n junction
- Non-uniformly doped junctions
- Boundary conditions and ideal p-n junction current
- Small signal model of p-n junction
- Generation and recombination current of p-n junction diode
- Charge storage and diode transients
- Physics of two/three terminal MOS device
- C-V characteristics of MOSFET
- Threshold voltage, Subthershold conduction, transconductance of MOSFET
- Substrate bias effect of MOSFET
- Channel length modulation and mobility variation of MOSFET
- Short-channel and narrow-channel effects
- Equivalent circuit model of MOSFET
- Physics of Bipolar Junction Transistor
- Minority carrier distribution of BJT
- Non-ideal effects: base width modulation, High injection, current crowding and non-uniform base doping, etc.
- Equivalent circuit model of BJT
- 2 sessions per week, 75 minutes each
Contribution to Professional Component:
- Engineering Sciences: 2.5
- Engineering Design: 0.5
Relationship to Program Outcomes:
This course supports the achievement of the following program outcomes:
- An ability to apply knowledge of mathematics, science, and engineering to the analysis of electrical engineering problems.
- An ability to design and conduct scientific and engineering experiments, as well as to analyze and interpret data.
- An ability to design systems which include hardware and/or software components within realistic constraints such as cost, manufacturability, safety and environmental concerns.
- An ability to identify, formulate, and solve electrical engineering problems.
- An ability to use modern engineering techniques for analysis and design.
- Knowledge of probability and statistics.
- An ability to analyze and design complex devices and/or systems containing hardware and/or software components.
- Knowledge of mathematics including differential equations, linear algebra, complex variables and discrete math.
Somnath Chattopadhyay, November 2005
Benjamin F. Mallard, November 2005
J. Michael Kabo, May 2007